LGE s9018 to-92 free download

File name s9018_to-92.pdf

S9018(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 A Collector cut-off current ICEO VCE=15V,IB=0 0.1 A Emitter cut-off current IEBO VEB=3V, IC=0 0.1 A DC current gain hFE VCE=5V, IC= 1mA 28 270 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V VCE=5 V, IC=5mA Transition frequency fT f =400MHz 600 MHz CLASSIFICATION OF hFE Rank D E F G H